512GB PCIe NVMe Gen4 QLC 3D NAND HMB Cache M.2 2230 Solid State Drive - 028YRF
$80.00
- Genuine Dell Part
| Condition | New |
|---|---|
| Warranty | 1 Year |
| Availability | In Stock |
| Manufacturer | Samsung Electronics |
|---|---|
| UPC Code | Does Not Apply |
Details
Product Specs
| Capacity | 512 GB |
|---|---|
| Cache Buffer | Host-Memory-Buffer (HMB) Pseudo-pSLC Cache with TurboWrite |
| Flash Type | Samsung 172-layer QLC V7 V-NAND Flash (Quad Level Cell) |
| Form Factor | M.2 2230-S2-M (M Key Single Sided) |
| Interface Speed | PCIe Express NVMe Generation 4.0 x4, NVMe v2.0 (4-Lanes) |
| Interface Connector | M.2 NGFF (M Key) |
| Sequential Read | up to 4,600 MB/sec (128KB Crystal Mark Disk) |
| Sequential Write | up to 2,600 MB/sec (128KB Crystal Mark Disk) |
| Random Read | up to 320,000K IOPS (QD32) |
| Random Write | up to 580,000K IOPS (QD32) |
| SSD Endurance | 150 TBW (Total Bytes Written) |
| Life Expectancy | 1.5 Million Hours MTBF (Mean Time Before Failures) |
| Shock Resistance | 1,500G (Gravity), duration: 0.5ms, 3 axis |
| Ecc Recovery | Low-Density Parity Check (LDPC) Error Correction and Protection |
| Rohs Compliant | Yes |
| Dimensions | (L x W x H) 30.15mm x 22.15mm x 2.38mm |
| Classification | Mid Level |
Key Features
- PCIe NVMe Gen-4.0 x4, NVMe 2.0
- Four-Plane NAND Design
- Samsung 176-layer QLC V-NAND Flash Memory
- HMB Pseudo-SLC Cache with TurboWrite Technology
- Samsung Piccolo 4-Channel Controller
- Cool, Low-Power 8nm Nickel Coated Controller
- Dynamic Thermal Guard (DTG) Technology
- Dynamic Thermal Throttling Technology
- Bad Block Management Technology
- Advanced Hardware LDPC Technology
- End-to-End Data Path Protection
- Advanced Power Management Technology
- Advanced Flash Management Technology
- TRIM Support Technology
- Auto Garbage Collection Technology
- Dynamic and Static Wear Leveling Technology
- Device Identifier Composition Engine (DICE) Security Feature
- Designed for Ultra Thin Laptops, Surface Pro Laptops, SteamDeck and Xbox X Series
Review